• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
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  • 优先权
    • 专利摘要:
    There is provided a mechanochemical polishing composition and a method for polishing tungsten, comprising: a metal oxide abrasive; an oxidant; a substance of formula I enhancing the rate of elimination of tungsten; and water ; wherein the polishing composition has a better tungsten removal rate and an amplification of the tungsten removal rate.
    公开号:FR3022914A1
    申请号:FR1555934
    申请日:2015-06-26
    公开日:2016-01-01
    发明作者:Yi Guo；Jr Raymond L Lavoie
    申请人:Rohm and Haas Electronic Materials CMP Holdings Inc；Rohm and Haas Electronic Materials LLC；
    IPC主号:
    专利说明:

    [0001] TECHNICAL CHEMICAL POLISHING COMPOSITION AND METHOD FOR POLISHING TUNGSTEN The present invention relates to the field of chemical mechanical polishing. In particular, the present invention relates to a chemical mechanical polishing composition containing: a metal oxide abrasive; an oxidant; a substance of formula I enhancing the rate of elimination of tungsten; and water ; which polishing composition has a better rate of removal of tungsten and an amplification of the rate of elimination of tungsten. The present invention also relates to a method for polishing a tungsten substrate. Tungsten is widely used in the manufacture of semiconductors for the formation of contact holes and connecting holes (vias) connecting inter-layered metal lines in the fabrication of integrated circuits. Binding holes are typically etched through an inter-level dielectric (ILD) to interconnect lines or a semiconductor substrate. A thin adhesion layer, for example titanium nitride or titanium, can then be formed on the ILD and in the etched bonding hole. A tungsten film is then deposited as a protective coating on the adhesion layer and in the bonding hole. Then the excess tungsten is removed by chemical mechanical polishing to form the tungsten bond holes. The chemical mechanical polishing composition used in the polishing of tungsten is an important variable for determining the success of the treatment. Depending on the choice of abrasive and other additives, the chemical mechanical polishing composition may be adapted to provide effective polishing of the various layers present at desired polishing rates while minimizing surface imperfections. defects, corrosion, and erosion of the inter-level dielectric adjacent to the tungsten bond holes. In addition, the chemical-mechanical polishing composition can be used to provide controlled polishing selectivity to other materials on the surface of the substrate which is polished, such as silicon oxide. titanium, titanium nitride, silicon nitride and the like. The polishing of tungsten is typically accomplished using a chemical mechanical polishing composition which contains abrasive particles and a chemical reagent. Conventional polishing compositions for polishing tungsten use fine particles of alumina (Al 2 O 3) or silica (SiO 2) as an abrasive material in a severe oxidizing environment. The choice of the oxidizing agent depends on the overall formulation of the polishing composition and the specific requirements for integrating tungsten into the substrate. Polishing compositions are increasingly formulated with ingredients that are designed to etch tungsten in an effort to enhance the rate of tungsten removal that the composition exhibits. However, in many cases, the resulting compositions etch tungsten in a manner that chemically etches tungsten from the surface instead of converting tungsten into a soft oxidized film that is more easily removed from the surface by mechanical abrasion. Because of this enhanced chemical action, these compositions tend to cause a hollow in the tungsten plug. Tungsten burrow holes, where the surface of the tungsten in the bonding hole is lower than the surrounding dielectric layer material, can cause problems of electrical contact with other areas of the device. In addition, digging at the center of the tungsten boring holes can lead to an increase in the non-planarity of the device on subsequent levels of the device. Tungsten etching from the center of the bonding holes can also cause a "keyhole" undesirable effect. An affirmed solution for improving the formation of tungsten binder holes is disclosed by Grumbine et al. in U.S. Patent No. 6,136,711. Grumbine et al. disclose a chemical mechanical polishing composition comprising: a compound which is capable of etching tungsten; and at least one tungsten etch inhibitor, wherein the tungsten etch inhibitor is a compound that contains a nitrogen functional group selected from compounds having three or four carbon atoms that form alkylammonium ions, the aminoalkyls having three atoms of carbon or more, amino acids other than sulfur amino acids, and mixtures thereof.
    [0002] There is, however, still a need for new chemical mechanical polishing compositions having improved tungsten polishing and selectivity characteristics. The present invention provides a chemical mechanical polishing composition for polishing a substrate comprising tungsten, comprising: a metal oxide abrasive; an oxidant; a substance of formula I enhancing the rate of tungsten elimination, wherein each of R ', R2 and R3 is independently C1-C4alkyl; and water ; which chemical mechanical polishing composition has a pH of 1 to 5; which chemical mechanical polishing composition has a tungsten removal rate of WRR k 2,000 A / min; wherein the substance of formula I enhancing the rate of removal of tungsten endows the chemical mechanical polishing composition with a better tungsten removal rate, and wherein the following expression is satisfied: WRR> WRR0 wherein WRR is the rate of removal of tungsten in Å / min for the chemical mechanical polishing composition and WRR0 is the rate of removal of tungsten in Å / min obtained under identical conditions in the absence of the substance of formula I amplifying the rate of elimination of tungsten 302 in the chemical mechanical polishing composition; and which chemical mechanical polishing composition has an amplification of the tungsten removal rate LWRR k 10% according to the following equation: AWRR = ((WRR WRR0) WRR0) * 100%. The present invention provides a chemical mechanical polishing composition for polishing a substrate comprising tungsten and silicon oxide (eg TEOS), consisting of: 0.1 to 5% of an abrasive based on silica; 0.1 to 0.5% by weight of an oxidant based on K103; 0.01 to less than 1% by weight of a substance of formula I enhancing the rate of tungsten removal, wherein each of R ', R2 and R3 is independently C1-C4 alkyl; and optionally a pH adjusting agent; which chemical mechanical polishing composition has a pH of 1 to 5; which chemical mechanical polishing composition has a rate of removal of tungsten WRR 2,000 A / min; wherein the substance of formula I enhancing the rate of tungsten removal endows the chemical mechanical polishing composition with a better tungsten removal rate, and wherein the following expression is satisfied: WRR> WRR0 20 in where WRR is the tungsten removal rate in Å / min for the chemical mechanical polishing composition and WRR0 is the tungsten removal rate in Å / min obtained under identical conditions except that the substance of formula I amplifying the Tungsten removal rate is absent from the chemical mechanical polishing composition; and which chemical mechanical polishing composition exhibits an amplification of the 10% tungsten L WRR removal rate according to the following equation: AwRR = ((WRR-WRR0) wRRo) * 100%. The present invention provides a method for mechanical-chemical polishing of a substrate, comprising the steps of: providing a polishing machine; having a substrate, the substrate comprising tungsten; having a chemical mechanical polishing composition of the present invention; have a chemical-mechanical polishing pad; install the chemical-mechanical polishing pad and substrate in the polishing machine; create a dynamic contact between the chemical mechanical polishing pad and the substrate; placing the chemical mechanical polishing composition near an interface between the chemical mechanical polishing pad and the substrate; wherein the chemical mechanical polishing composition comes into contact with the tungsten of the substrate; and wherein a portion of the tungsten is removed from the substrate. Detailed Description The chemical mechanical polishing composition of the present invention is designed for polishing a substrate comprising tungsten. The chemical mechanical polishing composition of the present invention is especially designed for mass removal of tungsten from the substrate. In some integration schemes, tungsten is applied to the surface of a substrate to fill contact holes. In these schemes, tungsten can be applied over an oxide layer. In these schemes, the excess tungsten is removed by polishing the surface of the substrate, leaving plugs in the contact holes. The term "enhanced rate of tungsten removal" as used herein and in the appended claims to describe the rate of removal of tungsten (rate of removal measured in Å / min) resulting from the addition of a substance of Formula I enhancing the rate of removal of tungsten from the chemical mechanical polishing composition, means that the following expression is satisfied: WRR> WRR0 wherein WRR is the rate of removal of tungsten in Å / min for a composition of chemical mechanical polishing of the present invention containing a substance of formula I enhancing the rate of removal of tungsten, as measured under the polishing conditions shown in the examples; WRR0 is the rate of removal of tungsten in  / min obtained under identical conditions in the absence of the substance of formula I amplifying the rate of removal of tungsten in the chemical mechanical polishing composition. The term "tungsten elimination rate enhancement" or "AWRR", as used herein and in the appended claims, means the relative amplification of the rate of tungsten removal, according to the following equation: AWRR = (WRR-wRRO) wRI20) * 100 ° / 0 in which AWRR is the amplification of the tungsten removal rate exhibited by a chemical mechanical polishing composition of the present invention containing a substance of formula I increasing the speed tungsten removal; WRR is the tungsten removal rate in Å / min for a chemical mechanical polishing composition of the present invention containing a substance of formula I enhancing the rate of tungsten removal, as measured under the polishing conditions set forth in US Pat. the examples ; and veR0 is the rate of removal of tungsten in Å / min obtained under identical conditions in the absence of the substance of formula I enhancing the rate of removal of tungsten in the chemical mechanical polishing composition.
    [0003] The chemical mechanical polishing composition of the present invention contains; an abrasive based on a metal oxide; an oxidant; a substance of formula I enhancing the rate of tungsten elimination: wherein each of R 1, R 2 and R 3 is independently a C 1 to C 4 alkyl group; and water ; wherein the substance of formula I enhancing the rate of tungsten removal provides the mechano-chemical polishing composition with a better rate of removal of tungsten, which chemical mechanical polishing composition exhibits an increase in the rate of elimination of tungsten. Preferably, the chemical mechanical polishing composition of the present invention for polishing a substrate comprising tungsten comprises: 0.01 to 40% by weight (preferably 0.1 to 10% by weight, more preferably 0.1 to 10% by weight); 5% by weight, most preferably 1 to 4% by weight) of a metal oxide abrasive. Preferably, the metal oxide abrasive is a silica abrasive. More preferably, the metal oxide abrasive is a silica abrasive, the silica abrasive being at least one of a colloidal silica abrasive and a fumed silica abrasive. . Most preferably, the metal oxide abrasive is a silica-based abrasive which is at least one of a positively-charged colloidal silica-based abrasive (eg Fuso PL-colloidal silica abrasive). Available from Fuso Chemical Co., Ltd.) and a fumed silica-based abrasive (eg AERODISPC hydrophilic fumed silica dispersion) W 7512 S available from Evonik Industries). Preferably, the metal oxide abrasive has a particle size of 1 to 300 nm (more preferably 10 to 300 and most preferably 10 to anion + 7,200 nm). More preferably, the metal oxide abrasive is a silica-based abrasive which is at least one of a positively charged colloidal silica abrasive having an average particle size of 10 to 200 nm (most preferably 25 to 50 μm). at 50 nm) and a fumed silica abrasive having an average particle size of 10 to 300 nm (most preferably 100 to 200 nm). Preferably, the chemical mechanical polishing composition of the present invention contains 0.001 to 10% by weight (more preferably 0.01 to 1% by weight, most preferably 0.1 to 0.5% by weight) of an oxidizing agent. . Preferably, the oxidant is chosen from hydrogen peroxide (H 2 O 2), monopersulphates, iodates, magnesium perphthalate, peracetic acid and other peracids, persulfates, bromates, periodates, nitrates, iron salts, cerium salts, Mn (III), Mn (IV) and Mn (VI) salts, silver salts, copper salts, chromium salts, cobalt salts, halogens , hypochlorite, and mixtures thereof. More preferably, the oxidant is selected from KI03 and KI04. Especially, the oxidant is KI03. Preferably, the chemical mechanical polishing composition of the present invention contains 0.001 to 10% by weight (more preferably 0.01 to less than 1% by weight, most preferably 0.1 to 0.8% by weight) of a substance of formula I enhancing the rate of elimination of tungsten; wherein each of R1, R2 and R3 is independently C1-C4alkyl (preferably each of R1, R2 and R3 is independently C1-C2alkyl, most preferably each of R1-, R2 and R3 is independently a methyl group). Most preferably, the substance of formula I is benzyltrimethylammonium hydroxide.
    [0004] Preferably, the water contained in the chemical mechanical polishing composition of the present invention is at least one of deionized water and distilled water to limit accidental impurities. Preferably, the chemical mechanical polishing composition of the present invention is designed for polishing at a pH of 1 to 5. More preferably, the chemical mechanical polishing composition of the present invention is designed for polishing at a pH of 2 to 4 (more preferably 2 to 3, especially 2 to 2.5). The chemical mechanical polishing composition of the present invention may optionally contain inorganic and organic pH adjusting agents. Preferably, the optional pH adjusting agent is selected from an inorganic acid and an inorganic base. Most preferably, the optional pH adjusting agent is selected from nitric acid, sulfuric acid, hydrochloric acid, phosphoric acid, potassium sulfate and potassium hydroxide.
    [0005] Preferably, the chemical mechanical polishing composition of the present invention for polishing a substrate comprising tungsten contains less than 0.001% by weight of an inhibitor for controlling the rate of removal of the nonferrous connector by etching static or other mechanism of elimination. More preferably, the chemical mechanical polishing composition of the present invention for polishing a substrate comprising tungsten contains less than 0.0001% by weight of an inhibitor for controlling the rate of removal of the non-ferrous connector. by static etching or other removal mechanism. Especially, the chemical mechanical polishing composition of the present invention for polishing a tungsten-containing substrate contains less than the detectable limit of an inhibitor for controlling the rate of removal of non-ferrous connection by static etching. or another mechanism of elimination. Inhibitors used to control the rate of elimination of non ferrous connectors by static etching include azole inhibitors which are intended for copper and silver connectors. Typical azole inhibitors include benzotriazole (BTA), mercaptobenzothiazole (MBT), tolyltriazole and imidazole. Preferably, the chemical mechanical polishing composition of the present invention has a tungsten removal rate of WRR of 2000 A / min (preferably 2500 A / min, more preferably 2600 A / min; (2,700 Å / min), measured at a platinum speed of 113 rpm, a carrier speed of 111 rpm, a chemical mechanical polishing rate of 150 ml / min, and a nominal downward force of 29 kPa on a 200 mm polishing machine using a chemical-mechanical polishing pad comprising a polyurethane polishing layer containing polymeric hollow core microparticles and a polyurethane impregnated non-woven subpad; wherein the substance of formula I enhancing the rate of removal of tungsten endows the chemical mechanical polishing composition with a better tungsten removal rate, and wherein the following expression is satisfied: WRR> WRR0 wherein WRR is the rate of removal of tungsten in Å / min for the chemical mechanical polishing composition and WRR0 is the rate of removal of tungsten in Å / min obtained under identical conditions in the absence of the substance of formula I amplifying the rate of removal of tungsten in the chemical mechanical polishing composition; and which chemical mechanical polishing composition of the present invention exhibits an enhancement of the rate of removal of tungsten LiWRR. 10% (preferably 15%, more preferably 20%, most preferably 25%) according to the following equation: AwRR = ((WRR -%) / wRRo) * 100%. Most especially, the chemical mechanical polishing composition of the present invention has an amplification of the tungsten elimination rate WRR for which at least one of the following equations is satisfied: ((WRR_WRR0) / WRR0) A IRR0 ) * 100> 10; ((WRR _WRR0) / .IRR0,) * vv 100 _k 15; ((WRR _ wRR0) veR.0) * 100, k 20; and ((WRR _ wRR0) WRR0) * 100 25. Preferably, the chemical mechanical polishing composition of the present invention for polishing a substrate comprising tungsten (preferably tungsten and silicon oxide) consists of: 0.1 to 5% by weight of a silica-based abrasive; 0.1 to 0.5% by weight of an oxidant based on K103; 0.01 to less than 1% by weight (preferably 0.01 to 0.8% by weight) of a substance of formula I enhancing the rate of elimination of tungsten, wherein each of R1, R2 and R3 is independently C1-C4alkyl (preferably each of R1, R2 and R3 is independently C1-C2alkyl, most preferably each of R1-, R2 and R3 is independently methyl); some water ; and optionally a pH adjusting agent; which chemical mechanical polishing composition has a pH of 1 to 5 (preferably 2 to 4, more preferably 2 to 3, most preferably 2 to 2.5); which chemical mechanical polishing composition has a tungsten removal rate of WRR k 2,000 A / min (preferably .k.
    [0006] 2500 Â / min; more preferably k 2,600 / min; especially 2,800 Å / min), measured at a platinum speed of 113 rpm, a carrier speed of 111 rpm, a chemical mechanical polishing rate of 150 ml / min, and a downward force nominal value of 29 kPa on a 200 mm polishing machine using a chemical-mechanical polishing pad comprising a polyurethane polishing layer containing polymeric hollow core microparticles and a polyurethane impregnated non-woven subpad; wherein the substance of formula I enhancing the rate of removal of tungsten endows the chemical mechanical polishing composition with a better tungsten removal rate, and wherein the following expression is satisfied: WRR> WRR0 wherein WRR is the rate of removal of tungsten in Å / min for the chemical mechanical polishing composition of the present invention and WRR0 is the rate of removal of tungsten in Å / min measured under identical conditions in the absence of the substance of formula I enhancing the rate of removal of tungsten in the chemical mechanical polishing composition; and which chemical mechanical polishing composition has an amplification of the tungsten removal rate WRR 10% (preferably 15%, more preferably 20%, most preferably 25%) according to the following equation: WRR = ((WRR _ wRR0) / * veR0,) 100%. The chemical mechanical polishing process of the present invention preferably comprises the operations of: providing a polishing machine; having a substrate, the substrate comprising tungsten; having a chemical mechanical polishing composition of the present invention; have a chemical-mechanical polishing pad; install the chemical-mechanical polishing pad and substrate in the polishing machine; create a dynamic contact between the chemical mechanical polishing pad and the substrate; placing the chemical mechanical polishing composition near an interface between the chemical mechanical polishing pad and the substrate; wherein the chemical mechanical polishing composition comes into contact with the tungsten of the substrate; and wherein a portion of the tungsten is removed from the substrate. The substrate used in the chemical mechanical polishing process of the present invention comprises tungsten. Preferably, the substrate used comprises tungsten applied to a surface of the substrate to fill the contact holes, the method of the present invention being used to remove a mass of tungsten from the substrate leaving tungsten plugs in the contact holes on the substrate. the substrate. More preferably, the substrate used comprises tungsten applied over an oxide on the surface of the substrate to fill the contact holes. The oxide is preferably a silicon oxide (for example a borophosphosilicate glass (BPSG), plasma etched tetraethyl orthosilicate (PETEOS), a thermal oxide, an undoped silicate glass, a high density plasma oxide (HDP)).
    [0007] The chemical mechanical polishing pad used in the chemical mechanical polishing process of the present invention may be any suitable polishing pad known in the art. The chemical-mechanical polishing pad used is preferably selected from woven and non-woven polishing pads. Preferably, the used chemical-mechanical polishing pad comprises a polyurethane polishing layer. The chemical mechanical polishing pad used may be made of any suitable polymer having varying values of density, hardness, thickness, compressibility and modulus. Preferably, the chemical-mechanical polishing pad used has at least one of grooved and perforated polishing surfaces. Preferably, in the chemical mechanical polishing process of the present invention, the chemical mechanical polishing composition is placed on a polishing surface of the chemical mechanical polishing pad at or near an interface between mechano-chemical polishing and the substrate. Preferably, in the chemical mechanical polishing process of the present invention, a dynamic contact is created at the interface between the chemical mechanical polishing pad and the substrate with a downward force of 0.69 to 34.5 kPa.
    [0008] Preferably, in the chemical mechanical polishing process of the present invention, the chemical mechanical polishing composition used has a tungsten removal rate, WRR, of> 2000 A / min. More preferably, in the chemical mechanical polishing process of the present invention, the chemical mechanical polishing composition used has a tungsten removal rate, WRR, of> 2000Å / min (preferably > 2500 A / min, more preferably> 2600 A / min, most preferably> 2700 A / min), measured at a platinum speed of 113 rpm, a carrier speed of 111 rpm, a throughput of of a chemical-mechanical polishing composition of 150 ml / min, and a nominal downward force of 29 kPa on a 200 mm polishing machine using a chemical-mechanical polishing pad comprising a polyurethane polishing layer containing polymeric microparticles. hollow core and a nonwoven subpad impregnated with polyurethane, wherein the rate of removal of tungsten is an enhanced tungsten removal rate for which the following expression is satisfied: WRR> WRR0 wherein WRR is at a rate of removal of tungsten in Å / min for the chemical mechanical polishing composition of the present invention and WRR0 is the rate of removal of tungsten in Å / min measured under identical conditions in the absence of the substance of formula I enhancing the rate of removal of tungsten in the chemical mechanical polishing composition. Preferably, in the chemical mechanical polishing process of the present invention, the chemical mechanical polishing composition used has a tungsten removal rate of WRR> 2000 Å / min; and an amplification of the tungsten removal rate AWRR 10% (preferably, the chemical mechanical polishing composition used satisfies at least one of the following equations: ((WRR _ WRR0) / * verzo,) 100 10; ((WRR _ WRR0) / * wRRo (WRR _ WRR0) / * veR0.) 100 k 20; and ((WRR _ WRR0) / * veR0.) 100 25. Best of all, in the chemical mechanical polishing process of the In the present invention, the chemical mechanical polishing composition used has a tungsten removal rate of WRR> 2000 Å / min (preferably 2 2500 A / min, more preferably 2 2600 Å / min, most preferably 2 2700 Å). / min), measured at a platinum speed of 113 rpm, a carrier speed of 111 rpm, a mechanical-chemical polishing composition flow rate of 150 ml / min, and a nominal down force of 29 kPa on a 200 mm polishing machine using a chemical-mechanical polishing pad comprising a polyurethane polishing layer containing polymeric microparticles hollow core and a nonwoven sub-pad impregnated with polyurethane; wherein the tungsten removal rate is an amplified tungsten removal rate for which the following expression is satisfied: WRR> WRR0 wherein WRR is the tungsten removal rate in Å / min for the mechanical polishing composition -chemical of the present invention and WRR0 is the rate of removal of tungsten in  / min measured under identical conditions except that the substance of formula I amplifying the rate of removal of tungsten is absent from the chemical mechanical polishing composition ; and an increase in the tungsten removal rate AWRR ... 10% (most especially, the chemical-mechanical polishing composition used satisfies at least one of the following equations: ((WRR _ WRR0) / wRRo) * 100 ..; ((WRR _ WRR0) / * wRRo). 100 k 15; ((WRR _ WRR0) / * veR0.) 100 20; and ((WRR _ WRR0) / * WRR0.) 100 Preferably, in the chemical mechanical polishing process of the present invention, the substrate used further comprises a silicon oxide, preferably in the chemical mechanical polishing process of the present invention, wherein substrate used further comprises a silicon oxide, the chemical-mechanical polishing composition used has a tungsten removal rate selectivity with respect to silicon oxide> 5: 1 (preferably> 6: 1; > 50: 1, especially> 75: 1.) Better still, in the chemical-mechanical polishing process of the present invention. wherein the substrate used further comprises a silicon oxide, the chemical-mechanical polishing composition used has a tungsten removal rate WRR> 2000 A / min (preferably> 2500 A / min; better still> 2,600 Å / min; most preferably> 2700 Å / min), measured at a platinum speed of 113 rpm, a carrier speed of 111 rpm, a chemical mechanical polishing rate of 150 ml / min, and a force nominal descending rate of 29 kPa on a 200 mm polishing machine using a chemical mechanical polishing pad comprising a polyurethane polishing layer containing polymeric hollow core microparticles and a polyurethane impregnated nonwoven subpad; wherein the tungsten removal rate is an amplified tungsten removal rate for which the following expression is satisfied: WRR> WRR0 wherein WRR is the tungsten removal rate in Å / min for the mechanical polishing composition of the present invention and WRR0 is the rate of removal of tungsten in Å / min measured under identical conditions in the absence of the substance of formula I enhancing the rate of removal of tungsten in the mechanical polishing composition. chemical; and the chemical mechanical polishing composition has an amplification of the tungsten removal rate AWRR 10% (especially, at least one of the following equations is satisfied: ((WRR _ WRR0) / WRR0) * 100k 10 ((WRR_WRR0) / WRR0) * 100k 15; ((WRR _ WRR0 And wherein the chemical mechanical polishing composition has a tungsten removal rate selectivity with respect to to silicon oxide> 5: 1 (preferably> 6: 1, more preferably> 50: 1, most preferably> 75: 1), measured at a platinum speed of 113 rpm, a carrier speed of 111 rpm, a chemical mechanical polishing composition flow rate of 150 ml / min, and a nominal down force of 29 kPa on a 200 mm polishing machine using a chemical mechanical polishing pad comprising a polishing layer polyurethane containing polymeric hollow-core microparticles and a nonwoven sub-pad impregnated with polyurethane. The present invention will now be described in detail in the following examples.
    [0009] Comparative Examples C1-C7 and Examples 1-6 Chemical-Mechanical Polishing Compositions The chemical-mechanical polishing compositions of Comparative Examples C1-C7 and Examples 1-6 were prepared by combining the components in the amounts indicated in the Table. 1 (in% by weight), the remainder being deionized water, and adjusting the pH of the compositions as needed to the final pH indicated in Table 1 with nitric acid or potassium hydroxide. Table 1 Ex No. Abrasive Silica Abrasive Silica KI03 Hydrogen Phthalate BTMAC * TBAH Ammonia Diquat Colloidal pH * Smoke E (% wt) Ammonium (wt%) (wt.%) (Wt.%) (Wt.%) E (wt.%) ( % wt) (% wt) Cl 1 --- 0.6 0.25 --- --- --- 2.2 C2 1 --- 0.6 0.25 --- --- --- 0.05 2.2 C3 2 --- 0.6 0.25 --- --- --- 2.2 C4 2 - 0.6 0.25 --- --- 0.1 - 2, 2 C5 2 --- 0.6 0.25 - --- --- --- 2.2 C6 2 --- 0.6 0.25 --- 0.738 - --- 2.2 C7 --- 2 0,6 0,25 --- --- --- --- 2,2 1 2 --- 0,6 0,25 0,530 --- --- --- 2,2 2 2 - 0,6 0,25 0,265 --- --- --- 2,2 3 2 --- 0,6 0,25 0,530 --- --- - 2,2 4 2 --- 0.6 0.25 0.795 - --- --- 2.2 5 --- 2 0.6 0.25 0.020 --- --- - 2.2 6 --- 2 0.6 0 0.100 --- --- --- 2.2 Fuso PL-3 Colloidal Silica Abrasive available from Fuso Chemical Co., Ltd. Dispersion of hydrophilic fumed silica AERODISP® W 7512 S available from Evonik Industries. A substance of formula I enhancing the rate of removal of tungsten, especially benzyltrimethylammonium chloride (BTMAC) available from Aldrich. N, N, N, N ', N', N'-hexabutyl-1,4-butanediammonium dihydroxide available from Sachem, Inc., having the following structure: ## STR3 ## PC1-PC7 and Examples P1-P6 Elimination rate tests during polishing were carried out to determine the rate of removal of silicon dioxide (in Å / min) and the rate of removal of tungsten ( in λ / min) using each of the chemical mechanical polishing compositions (CMPC) prepared in accordance with Comparative Examples C1-C7 and Examples 1-6 in Comparative Examples PC1-PC7 and Examples P1-P6, respectively. The removal rate experiments were carried out during polishing on tetraethyl orthosilicate (TEOS) sheet slabs 1k with a 200 mm insulating layer of SEMATECH SVTC and slabs with a tungsten insulating layer ( W) available at SEMATECH SVTC. For all polishing tests, a 200 mm Mirra® polisher from Applied Materials was used. All polishing experiments were carried out using an IC1010 ™ polyurethane polishing pad (commercially available from Rohm and Haas Electronic Materials CMP Inc.) and using the polishing conditions shown in Table 2. AMO2BSL8031C1-PM diamond pad conditioner (commercially available from Saesol Diamond Ind. Co., Ltd.) for conditioning the polishing pads. The polishing pads were broken with the conditioner using a descending force of 3.18 kg (7.0 pounds) for 20 minutes. The ex situ polishing pads were further packaged prior to polishing using a downward force of 2.36 kg (5.2 liters). The TEOS removal rates reported in Table 3 were determined by measuring the film thickness before and after polishing using a KLA-Trncor FX200 metrology tool. W elimination rates reported in Table 3 were determined using a Jordan Valley JVX-5200T metrology tool.
    [0010] 3022 9 14 20 Table 2 Ex CMPC Force Rate Speed of No. CMPC Descending Platinum Carrier (ml / min) (kPa) (rpm) (rpm) PCi Cl 150 20.7 133 111 PC2 C2 150 20.7 133 111 PC3 C3 150 29.0 113 111 PC4 C4 150 29.0 113 111 PC5 C5 150 29.0 113 111 PC6 C6 150 29.0 113 111 PC7 C7 150 29.0 113 111 P1 1 150 29, 0 113 111 P2 2 150 29.0 113 111 P3 3 150 29.0 113 111 P4 4 150 29.0 113 111 P5 5 150 29.0 113 111 P6 6 150 29.0 113 111 Table 3 5 (WACC) Speed elimination of the rate of removal of tungsten (in  / min) TEOS (in  / min) Cl 2580 383 C2 2233 296 C3 1917 763 C4 1727 745 C5 2037 616 C6 2043 371
    权利要求:
    Claims (10)
    [0001]
    REVENDICATIONS1. A chemical mechanical polishing composition for polishing a substrate comprising tungsten, comprising: a metal oxide abrasive; an oxidant; a substance which enhances the tungsten removal rate of formula I: + anion in which each of R 1 -, R 2 and R 3 is independently a C 1-4 alkyl group; and water ; which chemical mechanical polishing composition has a pH of 1 to 5; which chemical mechanical polishing composition has a tungsten removal rate of WRR k 2,000 A / min; wherein the substance of formula I enhancing the rate of removal of tungsten endows the chemical mechanical polishing composition with a better tungsten removal rate, and wherein the following expression is satisfied: WRR> WRR0 wherein WRR is the rate of removal of tungsten in Å / min for the chemical mechanical polishing composition and WRR0 is the rate of removal of tungsten in Å / min obtained under identical conditions in the absence of the substance of formula I amplifying the rate of removal of tungsten in the chemical mechanical polishing composition; and which chemical mechanical polishing composition exhibits an amplification of the tungsten removal rate LXWRR k in accordance with the following equation: AwRR = ((WRR _ AIR%) wRRo) * 100%. 5
    [0002]
    2. Chemical mechanical polishing composition according to claim 1, characterized in that it contains <0.001% by weight of an inhibitor for controlling the speed of elimination of the non-ferrous connection by static etching or other mechanism 10 disposal.
    [0003]
    3. A chemical mechanical polishing composition according to claim 1, wherein at least one of the following equations is satisfied: ((WRR _ wfflo) vvizRo. *) 100 k 10; * ((WRR _ vvRizo) veR0,) 100 15; ((WRR _ wRR0) WRR0) * 100k20; and ((WRR _ veR0) AIRR0. *) 100 25. 20
    [0004]
    4. A process for mechanical-chemical polishing of a substrate, characterized in that it comprises the operations of: disposing of a polishing machine; having a substrate, the substrate comprising tungsten; having a chemical mechanical polishing composition according to claim 1; have a chemical-mechanical polishing pad; install the chemical-mechanical polishing pad and substrate in the polishing machine; creating a dynamic contact between the chemical mechanical polishing pad and the substrate; Placing the chemical mechanical polishing composition near an interface between the chemical mechanical polishing pad and the substrate; wherein the chemical mechanical polishing composition comes into contact with the tungsten of the substrate; and wherein a portion of the tungsten is removed from the substrate.
    [0005]
    5. The method of claim 4, wherein the chemical mechanical polishing composition used contains <0.001% by weight of an inhibitor for controlling the rate of removal of the non-ferrous connector by static etching or other mechanical mechanism. 'elimination.
    [0006]
    The method of claim 5, wherein the chemical mechanical polishing composition used meets at least one of the following equations: ((WRR-WRR0) / WRR0) * 100 10; ((WRR _ WRR0)) / * wRRo,) 100 15; ((WRR _ WRR0) / * wRR0,) 100 ..k. 20; and ((WRR _ WRR0) / * veR0.) 100 ..k 25. 20
    [0007]
    The method of claim 5, wherein the chemical mechanical polishing composition used has a tungsten removal rate of WRR> 2500 A / min. 25
    [0008]
    The method of claim 7, wherein the chemical mechanical polishing composition used satisfies at least one of the following equations: ((WRR _ WRR0) / * WRR0) 100 10; ((WRR _ WRR0) / * veR0.) 100 15; ((WRR _ WRR0) / * veR0,) 100 20; and ((wRR_ veR0) veR0) * 100> 25.
    [0009]
    The method of claim 5, wherein the substrate used further comprises a silicon oxide.
    [0010]
    The method of claim 9, wherein the chemical mechanical polishing composition used has a tungsten removal rate selectivity with respect to silicon oxide> 5: 1.
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    同族专利:
    公开号 | 公开日
    CN105315894A|2016-02-10|
    FR3022914B1|2020-01-17|
    KR20160001684A|2016-01-06|
    TW201615776A|2016-05-01|
    US20150380295A1|2015-12-31|
    CN105315894B|2019-06-28|
    US9275899B2|2016-03-01|
    JP6595227B2|2019-10-23|
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    DE102015007226A1|2015-12-31|
    JP2016048777A|2016-04-07|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    US6083419A|1997-07-28|2000-07-04|Cabot Corporation|Polishing composition including an inhibitor of tungsten etching|
    KR100343391B1|1999-11-18|2002-08-01|삼성전자 주식회사|Non-selective Slurries for Chemical Mechanical Polishing of metal layer and Method for Manufacturing thereof, and Method for Forming Plug in Insulating layer on Wafer|
    US20050076580A1|2003-10-10|2005-04-14|Air Products And Chemicals, Inc.|Polishing composition and use thereof|
    US7253111B2|2004-04-21|2007-08-07|Rohm And Haas Electronic Materials Cmp Holding, Inc.|Barrier polishing solution|
    US7446046B2|2005-01-06|2008-11-04|Intel Corporation|Selective polish for fabricating electronic devices|
    US20080020680A1|2006-07-24|2008-01-24|Cabot Microelectronics Corporation|Rate-enhanced CMP compositions for dielectric films|
    CN101591508A|2008-05-30|2009-12-02|安集微电子（上海）有限公司|A kind of polishing slurries that is used for chemical mechanical polishing of metals and uses thereof|
    JP5371416B2|2008-12-25|2013-12-18|富士フイルム株式会社|Polishing liquid and polishing method|
    CN102093816B|2009-12-11|2017-02-22|安集微电子（上海）有限公司|Chemical mechanical polishing liquid|
    US8431490B2|2010-03-31|2013-04-30|Rohm And Haas Electronic Materials Cmp Holdings, Inc.|Method of chemical mechanical polishing a substrate with polishing composition adapted to enhance silicon oxide removal|
    JP5979872B2|2011-01-31|2016-08-31|花王株式会社|Manufacturing method of magnetic disk substrate|US9534148B1|2015-12-21|2017-01-03|Rohm And Haas Electronic Materials Cmp Holdings, Inc.|Method of polishing semiconductor substrate|
    WO2018058347A1|2016-09-28|2018-04-05|Rohm And Haas Electronic Materials Cmp Holdings, Inc.|Chemical mechanical polishing of tungsten using method and composition containing quaternary phosphonium compounds|
    JP6936315B2|2016-09-29|2021-09-15|ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド|Chemical mechanical polishing method for tungsten|
    US10633557B2|2016-09-29|2020-04-28|Rohm And Haas Electronic Materials Cmp Holdings, Inc.|Chemical mechanical polishing method for tungsten|
    CN108214108A|2016-12-09|2018-06-29|中芯国际集成电路制造有限公司|A kind of chemical and mechanical grinding method|
    US9984895B1|2017-01-31|2018-05-29|Rohm And Haas Electronic Materials Cmp Holdings, Inc.|Chemical mechanical polishing method for tungsten|
    US10181408B2|2017-01-31|2019-01-15|Rohm And Haas Electronic Materials Cmp Holdings, Inc.|Chemical mechanical polishing method for tungsten using polyglycols and polyglycol derivatives|
    US10600655B2|2017-08-10|2020-03-24|Rohm And Haas Electronic Materials Cmp Holdings, Inc.|Chemical mechanical polishing method for tungsten|
    US10995238B2|2018-07-03|2021-05-04|Rohm And Haas Electronic Materials Cmp Holdings|Neutral to alkaline chemical mechanical polishing compositions and methods for tungsten|
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    优先权:
    申请号 | 申请日 | 专利标题
    US14/317,334|US9275899B2|2014-06-27|2014-06-27|Chemical mechanical polishing composition and method for polishing tungsten|
    US14317334|2014-06-27|
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